Bonding alignment marks at bonding in interface

ABSTRACT

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact and a first bonding alignment mark. The second semiconductor structure includes a second device layer, and a second bonding layer disposed below the second device layer and including a second bonding contact and a second bonding alignment mark. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface.

CROSS REFERENCE TO RELATED APPLICATION

This application is continuation of International Application No.PCT/CN2018/116664, filed on Nov. 21, 2018, entitled “BONDING ALIGNMENTMARKS AT BONDING INTERFACE,” which is hereby incorporated by referencein its entirety.

BACKGROUND

Embodiments of the present disclosure relate to bonded semiconductorstructures and fabrication methods thereof.

Planar semiconductor devices, such as memory cells, are scaled tosmaller sizes by improving process technology, circuit design,programming algorithm, and fabrication process. However, as featuresizes of the semiconductor devices approach a lower limit, planarprocess and fabrication techniques become challenging and costly. Athree-dimensional (3D) device architecture can address the densitylimitation in some planar semiconductor devices, for example, Flashmemory devices.

A 3D semiconductor device can be formed by stacking semiconductor wafersor dies and interconnecting them vertically using, for instance,through-silicon vias (TSVs) or copper-to-copper (Cu—Cu) connections, sothat the resulting structure acts as a single device to achieveperformance improvements at reduced power and smaller footprint thanconventional planar processes. Among the various techniques for stackingsemiconductor substrates, hybrid bonding is recognized as one of thepromising techniques because of its capability of forming high-densityinterconnects.

SUMMARY

Embodiments of semiconductor devices, bonded structures, and fabricationmethods thereof are disclosed herein.

In one example, a semiconductor device includes a first semiconductorstructure, a second semiconductor structure, and a bonding interfacebetween the first semiconductor structure and the second semiconductorstructure. The first semiconductor structure includes a substrate, afirst device layer disposed on the substrate, and a first bonding layerdisposed above the first device layer and including a first bondingcontact and a first bonding alignment mark. The second semiconductorstructure includes a second device layer, and a second bonding layerdisposed below the second device layer and including a second bondingcontact and a second bonding alignment mark. The first bonding alignmentmark is aligned with the second bonding alignment mark at the bondinginterface, such that the first bonding contact is aligned with thesecond bonding contact at the bonding interface.

In another example, a bonded structure includes a first bonding layerincluding a first bonding contact and a first bonding alignment mark, asecond bonding layer including a second bonding contact and a secondbonding alignment mark, and a bonding interface between the firstbonding layer and the second bonding layer. The first bonding alignmentmark is aligned with the second bonding alignment mark at the bondinginterface, such that the first bonding contact is aligned with thesecond bonding contact at the bonding interface. A dimension of each ofthe first bonding alignment mark and the second bonding alignment markis not greater than about 15 μm.

In still another example, a method for forming a semiconductor device isdisclosed. A first device layer is formed on a first substrate. A firstbonding layer including a first bonding contact and a first bondingalignment mark is formed above the first device layer. A second devicelayer is formed on a second substrate. A second bonding layer includinga second bonding contact and a second bonding alignment mark is formedabove the second device layer. The first bonding alignment mark isaligned with the second bonding alignment mark, such that the firstbonding contact is aligned with the second bonding contact. The firstsubstrate and the second substrate are bonded in a face-to-face manner,so that the first bonding contact is in contact with the second bondingcontact at a bonding interface, and the first bonding alignment mark isin contact with the second bonding alignment mark at the bondinginterface.

In yet another example, a method for determining a degree of alignmentof a bonded structure is disclosed. A first bonding layer including afirst bonding contact and a first lithography overlay mark is formed. Asecond bonding layer including a second bonding contact and a secondlithography overlay mark is formed. The first bonding layer and thesecond bonding layer are bonded in a face-to-face manner at a bondinginterface. A degree of alignment between the first lithography overlaymark and the second lithography overlay mark is measured. A degree ofalignment between the first bonding contact and the second bondingcontact is determined based on the measured degree of alignment betweenthe first lithography overlay mark and the second lithography overlaymark.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1A illustrates a cross-section of an exemplary bonded semiconductordevice, according to some embodiments of the present disclosure.

FIG. 1B illustrates a cross-section of another exemplary bondedsemiconductor device, according to some embodiments of the presentdisclosure.

FIG. 2 illustrates a cross-section of a bonded semiconductor deviceincluding bonding alignment marks in interconnect layers away from thebonding interface.

FIGS. 3A-3C illustrate plan views of the bonding alignment marks ininterconnect layers away from the bonding interface as illustrated inFIG. 2.

FIG. 4 illustrates a cross-section of an exemplary bonded semiconductordevice including bonding alignment marks in bonding layers at thebonding interface, according to some embodiments of the presentdisclosure.

FIGS. 5A-5C illustrate plan views of exemplary bonding alignment marksin bonding layers at the bonding interface as illustrated in FIG. 4,according to some embodiments of the present disclosure.

FIGS. 6A-6B illustrate enlarged plan views of the exemplary bondingalignment marks illustrated in FIGS. 5A-5C, according to someembodiments of the present disclosure.

FIG. 7 is a flowchart of an exemplary method for forming a semiconductordevice including bonding alignment marks at the bonding interface,according to some embodiments of the present disclosure.

FIG. 8 is a flowchart of an exemplary method for measuring a degree ofalignment of a bonded structure, according to some embodiments of thepresent disclosure.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or via contacts are formed) and one ormore dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with vertically oriented strings of memory cell transistors(referred to herein as “memory strings,” such as NAND memory strings) ona laterally-oriented substrate so that the memory strings extend in thevertical direction with respect to the substrate. As used herein, theterm “vertical/vertically” means nominally perpendicular to the lateralsurface of a substrate.

In the hybrid bonding process, the degree of alignment of the bondingcontacts is an important factor affecting the yield. In order to avoiddishing effect and control flatness of the surfaces forming the bondinginterface, bonding alignment marks are commonly formed in theinterconnect layers away from the bonding interface, which make itimpossible to directly measure the degree of alignment of the bondingcontacts at the bonding interface.

Various embodiments in accordance with the present disclosure providebonding alignment marks that can be formed in the bonding layers at thebonding interface of a bonded semiconductor device, thereby enabling thedirect measurement of the degree of alignment of bonding contacts at thebonding interface. By forming the bonding alignment marks at the bondinginterface, as opposed to in the interconnect layers, the overlaymismatch between the bonding contacts and the interconnect layers can beavoided. The size and/or layout of the bonding alignment marks disclosedherein can be optimized to reduce the dishing effect occurred at thebonding interface. In some embodiments, the alignment marks forlithography overlay are used at the bonding interface as the bondingalignment marks for aligning the bonding contacts using the sameinstrument for lithography overlay control.

FIG. 1A illustrates a cross-section of an exemplary bonded semiconductordevice 100, according to some embodiments of the present disclosure.Bonded semiconductor device 100 represents an example of anon-monolithic 3D memory device. The term “non-monolithic” means thatthe components of bonded semiconductor device 100 (e.g., peripheraldevices and memory array devices) can be formed separately on differentsubstrates and then bonded to form a bonded semiconductor device. Bondedsemiconductor device 100 can include a substrate 108, which can includesilicon (e.g., single crystalline silicon), silicon germanium (SiGe),gallium arsenide (GaAs), germanium (Ge), silicon on insulator (SOI), orany other suitable materials. For ease of description, bondedsemiconductor device 100 will be described as a non-monolithic 3D memorydevice. However, it is understood that bonded semiconductor device 100is not limited to a 3D memory device and can include any suitable bondedsemiconductor devices that have bonding alignment marks at the bondinginterface as described below in detail. It is understood that bondedsemiconductor devices that use the bonding alignment marks at thebonding interface as disclosed herein are not limited to the examplesshown in FIGS. 1A-1B and can include any other suitable semiconductordevices, such as logic devices, volatile memory devices (e.g., dynamicrandom-access memory (DRAM) and static random-access memory (SRAM)), andnon-volatile memory devices (e.g., Flash memory), in a 2D, 2.5D, or 3Darchitecture.

Bonded semiconductor device 100 can include two semiconductorstructures, i.e., a memory array device chip 102 and a peripheral devicechip 104 bonded on top of memory array device chip 102 in a face-to-facemanner at a bonding interface 106. In some embodiments, bondinginterface 106 is disposed between memory array device chip 102 andperipheral device chip 104 as a result of hybrid bonding (also known as“metal/dielectric hybrid bonding”), which is a direct bonding technology(e.g., forming bonding between surfaces without using intermediatelayers, such as solder or adhesives) and can obtain metal-metal bondingand dielectric-dielectric bonding simultaneously. In some embodiments,bonding interface 106 is the place at which memory array device chip 102and peripheral device chip 104 are met and bonded. In practice, bondinginterface 106 can be a layer with a certain thickness that includes thetop surface of memory array device chip 102 and the bottom surface ofperipheral device chip 104.

It is noted that x and y axes are included in FIG. 1A to furtherillustrate the spatial relationship of the components in bondedsemiconductor device 100 having substrate 108. Substrate 108 includestwo lateral surfaces (e.g., a top surface and a bottom surface)extending laterally in the x-direction (i.e., the lateral direction). Asused herein, whether one component (e.g., a layer or a device) is “on,”“above,” or “below” another component (e.g., a layer or a device) of asemiconductor device (e.g., bonded semiconductor device 100) isdetermined relative to the substrate of the semiconductor device (e.g.,substrate 108) in the y-direction (i.e., the vertical direction) whenthe substrate is positioned in the lowest plane of the semiconductordevice in the y-direction. The same notion for describing spatialrelationship is applied throughout the present disclosure.

In some embodiments, memory array device chip 102 is a NAND Flash memorydevice in which memory cells are provided in the form of an array ofNAND memory strings 110 in a memory array device layer 134. Memory arraydevice layer 134 can be disposed on substrate 108. In some embodiments,each NAND memory string 110 extends vertically through a plurality ofpairs each including a conductor layer and a dielectric layer (referredto herein as “conductor/dielectric layer pairs”). The stackedconductor/dielectric layer pairs are collectively referred to herein asa “memory stack” 112 in memory array device layer 134. The conductorlayers and dielectric layers in memory stack 112 can stack alternatinglyin the vertical direction. Each NAND memory string 110 can include asemiconductor channel and a composite dielectric layer (also known as a“memory film”) including a tunneling layer, a storage layer (also knownas a “charge trap/storage layer”), and a blocking layer (not shown). Insome embodiments, memory array device layer 134 further includes a gateline slit (“GLS”) 114 that extends vertically through memory stack 112.GLS 114 can be used to form the conductor/dielectric layer pairs inmemory stack 112 by a gate replacement process and can be filled withconductive materials for electrically connecting an array common source(ACS).

In some embodiments, memory array device chip 102 also includes an arrayinterconnect layer 136 above memory array device layer 134 fortransferring electrical signals to and from NAND memory strings 110. Asshown in FIG. 1A, array interconnect layer 136 can include a pluralityof interconnects (also referred to herein as “contacts”), includingvertical interconnect access (via) contacts 116 and lateral interconnectlines 118. As used herein, the term “interconnects” can broadly includeany suitable types of interconnects, such as middle-end-of-line (MEOL)interconnects and back-end-of-line (BEOL) interconnects. Arrayinterconnect layer 136 can further include one or more interlayerdielectric (ILD) layers (also known as “intermetal dielectric (IMD)layers”) in which interconnect lines 118 and via contacts 116 can form.

As shown in FIG. 1A, memory array device chip 102 can further include abonding layer 138 at bonding interface 106 and above array interconnectlayer 136 and memory array device layer 134. Bonding layer 138 caninclude a plurality of bonding contacts 130 and dielectrics electricallyisolating bonding contacts 130. Bonding contacts 130 can includeconductive materials including, but not limited to, tungsten (W), cobalt(Co), copper (Cu), aluminum (Al), silicides, or any combination thereof.The remaining area of bonding layer 138 can be formed with dielectricsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low-k dielectrics, or any combination thereof. Bondingcontacts 130 and surrounding dielectrics in bonding layer 138 can beused for hybrid bonding.

Peripheral device chip 104 can include a plurality of transistors 122 ina peripheral device layer 140 disposed below a semiconductor layer 120,such as a thinned substrate. In some embodiments, peripheral devicelayer 140 can include any suitable digital, analog, and/or mixed-signalperipheral circuits used for facilitating the operation of bondedsemiconductor device 100. For example, peripheral device layer 140 caninclude one or more of a page buffer, a decoder (e.g., a row decoder anda column decoder), a sense amplifier, a driver, a charge pump, a currentor voltage reference, or any active or passive components of thecircuits (e.g., transistors, diodes, resistors, or capacitors).

Similar to memory array device chip 102, peripheral device chip 104 canalso include a peripheral interconnect layer 142 disposed belowperipheral device layer 140 for transferring electrical signals to andfrom transistors 122. Peripheral interconnect layer 142 can include aplurality of interconnects, including interconnect lines 126 and viacontacts 124 in one or more ILD layers. In some embodiments, peripheraldevice chip 104 also include via contacts 128 (e.g., through siliconvias (TSVs) if semiconductor layer 120 is a thinned silicon substrate)extending vertically through semiconductor layer 120. In someembodiments, peripheral device chip 104 further includes a BEOLinterconnect layer (not shown) above transistors 122 and semiconductorlayer 120. In some embodiments, the BEOL interconnect layer includes anysuitable BEOL interconnects and contact pads that can transferelectrical signals between bonded semiconductor device 100 and externalcircuits.

As shown in FIG. 1A, peripheral device chip 104 can further include abonding layer 144 at bonding interface 106 and below peripheralinterconnect layer 142 and peripheral device layer 140. Bonding layer144 can include a plurality of bonding contacts 132 and dielectricselectrically isolating bonding contacts 132. Bonding contacts 132 caninclude conductive materials including, but not limited to, W, Co, Cu,Al, silicides, or any combination thereof. The remaining area of bondinglayer 144 can be formed with dielectrics including, but not limited to,silicon oxide, silicon nitride, silicon oxynitride, low-k dielectrics,or any combination thereof. Bonding contacts 132 and surroundingdielectrics in bonding layer 144 can be used for hybrid bonding.

As described below in detail, bonding alignment marks (not shown) can beformed in bonding layers 138 and 144 at bonding interface 106 foraligning bonding contacts 130 and 132 during the bonding process and/orfor measuring the degree of alignment of bonding contacts 130 and 132after the bonding process. By arranging the bonding alignment marks inthe same layer (e.g., in bonding layers 138 and 144) as bonding contacts130 and 132 at bonding interface 106, misalignment and measurement errorcan be significantly reduced compared to the examples in which thebonding alignment marks are arranged in the interconnect layers (e.g.,array interconnect layer 136 and peripheral interconnect layer 142) awayfrom bonding interface 106.

FIG. 1B illustrates a cross-section of another exemplary bondedsemiconductor device 101, according to some embodiments of the presentdisclosure. Similar to bonded semiconductor device 100 described abovein FIG. 1A, bonded semiconductor device 101 represents an example of anon-monolithic 3D memory device in which two semiconductor structures,i.e., a peripheral device chip 103 and a memory array device chip 105are formed separately and bonded in a face-to-face manner at a bondinginterface 107. In some embodiments, bonding interface 107 is the placeat which memory array device chip 105 and peripheral device chip 103 aremet and bonded. In practice, bonding interface 107 can be a layer with acertain thickness that includes the top surface of peripheral devicechip 103 and the bottom surface of memory array device chip 105.Different from bonded semiconductor device 100 described above in FIG.1A in which peripheral device chip 104 is above memory array device chip102, bonded semiconductor device 101 in FIG. 1B includes peripheraldevice chip 103 disposed below memory array device chip 105. It isunderstood that the details of similar structures (e.g., materials,fabrication process, functions, etc.) in both bonded semiconductordevices 100 and 101 may not be repeated below.

Peripheral device chip 103 can include a plurality of transistors 111 ina peripheral device layer 135 disposed on and/or in a substrate 109. Insome embodiments, peripheral device layer 135 can include any suitabledigital, analog, and/or mixed-signal peripheral circuits used forfacilitating the operation of bonded semiconductor device 101. Forexample, peripheral device layer 135 can include one or more of a pagebuffer, a decoder (e.g., a row decoder and a column decoder), a senseamplifier, a driver, a charge pump, a current or voltage reference, orany active or passive components of the circuits (e.g., transistors,diodes, resistors, or capacitors). Peripheral device chip 103 can alsoinclude a peripheral interconnect layer 137 above peripheral devicelayer 135 for transferring electrical signals to and from transistors111. Peripheral interconnect layer 137 can include a plurality ofinterconnects, including interconnect lines 115 and via contacts 113 inone or more ILD layers. As shown in FIG. 1B, peripheral device chip 103further includes a bonding layer 139 at bonding interface 107 and aboveperipheral interconnect layer 137 and peripheral device layer 135.Bonding layer 139 can include a plurality of bonding contacts 131 anddielectrics electrically isolating bonding contacts 131.

In some embodiments, memory array device chip 105 is a NAND Flash memorydevice in which memory cells are provided in the form of an array ofNAND memory strings 121 in a memory array device layer 141 disposedbelow a semiconductor layer 119 (e.g., a thinned substrate). In someembodiments, each NAND memory string 121 extends vertically through amemory stack 117 in memory array device layer 141. Each NAND memorystring 121 can include a semiconductor channel and a compositedielectric layer (also known as a “memory film”) including a tunnelinglayer, a storage layer (also known as a “charge trap/storage layer”),and a blocking layer (not shown). In some embodiments, memory arraydevice chip 105 further includes a GLS 123 that extends verticallythrough memory stack 117. GLS 123 can be used to form theconductor/dielectric layer pairs in memory stack 117 by a gatereplacement process and can be filled with conductive materials forelectrically connecting an array common source ACS.

Memory array device chip 105 can also include an array interconnectlayer 143 below memory array device layer 141 for transferringelectrical signals to and from NAND memory strings 121. Arrayinterconnect layer 143 can include a plurality of interconnects,including interconnect lines 129 and via contacts 127 in one or more ILDlayers. Memory array device chip 105 can also include a BEOLinterconnect layer (not shown) above NAND memory strings 121 andsemiconductor layer 119. In some embodiments, the BEOL interconnectlayer includes any suitable BEOL interconnects and contact pads that cantransfer electrical signals between bonded semiconductor device 101 andexternal circuits. In some embodiments, memory array device chip 105further includes one or more through array contacts (TACs) 125 thatextend vertically through the entirety of memory stack 117 and at leastpart of semiconductor layer 119. The upper end of TAC 125 can contact aninterconnect in the BEOL interconnect layer (not shown), and the lowerend of TAC 125 can contact another interconnect 127 or 129 in arrayinterconnect layer 143. TAC 125 can thus make an electrical connectionbetween peripheral interconnect layer 137 and the BEOL interconnectlayer and carry electrical signals from peripheral device chip 103 tothe BEOL interconnects of bonded semiconductor device 101. As shown inFIG. 1B, memory array device chip 105 can further include a bondinglayer 145 at bonding interface 107 and below array interconnect layer143 and memory array device layer 141. Bonding layer 145 can include aplurality of bonding contacts 133 and dielectrics electrically isolatingbonding contacts 133.

As described below in detail, bonding alignment marks (not shown) can beformed in bonding layers 139 and 145 at bonding interface 107 foraligning bonding contacts 131 and 133 during the bonding process and/orfor measuring the degree of alignment of bonding contacts 131 and 133after the bonding process. By arranging the bonding alignment marks inthe same layer (e.g., in bonding layers 139 and 145) as bonding contacts131 and 133 at bonding interface 107, misalignment and measurement errorcan be significantly reduced compared to the examples in which thebonding alignment marks are arranged in the interconnect layers (e.g.,array interconnect layer 143 and peripheral interconnect layer 137) awayfrom bonding interface 107.

Chemical mechanical polishing (CMP, also known as “chemical mechanicalplanarization”) is a process of smoothing wafer surface with thecombination of chemical etching and free abrasive mechanical polishingand is used to planarize the metals (e.g., Cu, Al, W, etc.) of bondingcontacts 130, 131, 132, and 133 in bonding layers 138, 139, 144, and145. During the CMP process, the polishing pad can remove more metalmaterials in case of large metal patterns compared to small metalpatterns. On the other hand, the removal rate is less for dielectricscompared with metals. As a result, “dishing” (e.g., a dish-shaped curvewithout metal fill in the side view), which is a manufacturing defect,can occur at the bonding interface when the bonding layers includelarge-sized metal patterns. Since dishing effect can affect flatness ofthe surfaces of bonding layers at the bonding interface, large-sizedmetal patterns, including bonding alignment marks, are usually notformed in the bonding layers, but instead are usually formed in theinterconnect layers away from the bonding layers.

For example, FIG. 2 illustrates a cross-section of a bondedsemiconductor device 200 including bonding alignment marks 212 and 224in interconnect layers 210 and 222 away from a bonding interface 218.Bonded semiconductor device 200 includes a first semiconductor structure202 and a second semiconductor structure 204 bonded in a face-to-facemanner at bonding interface 218. First semiconductor structure 202includes a substrate 206, a first device layer 208 disposed on substrate206, a first interconnect layer 210 above first device layer 208, and afirst bonding layer 214 at bonding interface 218 and above firstinterconnect layer 210. In some embodiments, bonding interface 218 isthe place at which first semiconductor structure 202 and secondsemiconductor structure 204 are met and bonded. In practice, bondinginterface 218 can be a layer with a certain thickness that includes thetop surface of first semiconductor structure 202 and the bottom surfaceof second semiconductor structure 204. A first bonding alignment mark212 and a first bonding contact 216 are formed in different layers,i.e., first interconnect layer 210 and first bonding layer 214,respectively. Each of first bonding alignment mark 212 and first bondingcontact 216 is made of a metal, such as Cu, W, Al, Co, etc., and issurrounded by a dielectric, such as silicon oxide or silicon nitride.

Second semiconductor structure 204 includes a second device layer 220, asecond interconnect layer 222 below second device layer 220, and asecond bonding layer 226 at bonding interface 218 and below secondinterconnect layer 222. A second bonding alignment mark 224 and a secondbonding contact 228 are formed in different layers, i.e., secondinterconnect layer 222 and second bonding layer 226, respectively. Eachof second bonding alignment mark 224 and second bonding contact 228 ismade of a metal, such as Cu, W, Al, Co, etc., and is surrounded by adielectric, such as silicon oxide or silicon nitride.

As shown in FIG. 2, first and second bonding alignment marks 212 and 224are in interconnect layers 210 and 222, respectively, away from bondinginterface 218. For example, FIGS. 3A-3C illustrate plan views of bondingalignment marks 212 and 224 in interconnect layers 210 and 222 away frombonding interface 218 as illustrated in FIG. 2. The degree of alignmentbetween bonding alignments marks 212 and 224 (e.g., as shown in FIG. 3C)can only indirectly reflect the degree of alignment between interconnectlayers 210 and 222, but not the degree of alignment between bondingcontacts 216 and 228 in bonding layers 214 and 226 at bonding interface218. It is understood that the patterns of bonding alignment marks 212and 224 may vary in other conventional bonded semiconductor devices.Nevertheless, the size of the conventional bonding alignment marks(e.g., bonding alignment marks 212 and 224) is too large to avoiddishing effect. In some embodiments, a dimension (e.g., the length of aside) of a conventional bonding alignment mark is greater than about 100μm, such as greater than 100 μm.

FIG. 4 illustrates a cross-section of an exemplary bonded semiconductordevice 400 including bonding alignment marks 416 and 428 in bondinglayers 412 and 424 at a bonding interface 418, according to someembodiments of the present disclosure. Bonded semiconductor device 400can be a bonded memory device (e.g., bonded semiconductor devices 100and 101) or any suitable bonded semiconductor devices, such as logicdevices, volatile memory devices, and non-volatile memory devices.Bonded semiconductor device 400 can include a first semiconductorstructure 402 and a second semiconductor structure 404 bonded in aface-to-face manner at bonding interface 418. In some embodiments,bonding interface 418 is the place at which first semiconductorstructure 402 and second semiconductor structure 404 are met and bonded.In practice, bonding interface 418 can be a layer with a certainthickness that includes the top surface of first semiconductor structure402 and the bottom surface of second semiconductor structure 404.Different from the conventional bonded semiconductor devices (e.g.,bonded semiconductor device 200) in which the large-sized bondingalignment marks are away from the bonding interface, bonding alignmentmarks 416 and 428 in FIG. 4 are at bonding interface 418, which enablesthe direct measurement of the degree of alignment of bonding contacts414 and 426 at bonding interface 418 before, during, or after thebonding process.

As shown in FIG. 4, first semiconductor structure 402 can include asubstrate 406, a first device layer 408 disposed on substrate 406, afirst interconnect layer 410 above first device layer 408, and a firstbonding layer 412 at bonding interface 418 and above first interconnectlayer 410. In some embodiments, first semiconductor structure 402 is amemory array device chip, and first device layer 408 is a memory arraydevice layer that includes an array of NAND memory strings, such as NANDmemory strings 110 in FIG. 1A. In some embodiments, first semiconductorstructure 402 is a peripheral device chip, and first device layer 408 isa peripheral device layer that includes peripheral devices, such astransistors 111 in FIG. 1B. First interconnect layer 410 between firstdevice layer 408 and first bonding layer 412 can include interconnectlines and via contacts in one or more ILD layers. First interconnectlayer 410 does not include a bonding alignment mark for aligning firstand second bonding contacts 414 and 426, according to some embodiments,which is different from the conventional bonded semiconductor devices.

In some embodiments, first bonding layer 412 includes first bondingcontact 414 and first bonding alignment marks 416 both at bondinginterface 418. First bonding contact 414 and first bonding alignmentmarks 416 can be made of metals, such as Cu, W, Al, Co, etc., andsurrounded by dielectrics, such as silicon oxide or silicon nitride. Inone example, first bonding contact 414 and first bonding alignment marks416 are made of copper, and the dielectrics in first bonding layer 412electrically isolating first bonding contact 414 and first bondingalignment marks 416 are made of silicon oxide. First bonding contact 414can be electrically connected to the interconnects (not shown) in firstinterconnect layer 410, while first bonding alignment marks 416 areelectrically separated from the interconnects in first interconnectlayer 410, for example, by having a thickness smaller than the thicknessof first bonding layer 412 (and first bonding contact 414 therein). Itis understood that in some embodiments, the thickness of first bondingalignment marks 416 is the same as that of first bonding layer 412 (andfirst bonding contact 414 therein).

As shown in FIG. 4, second semiconductor structure 404 include a seconddevice layer 420, a second interconnect layer 422 below second devicelayer 420, and a second bonding layer 424 at bonding interface 418 andbelow second interconnect layer 422. In some embodiments, secondsemiconductor structure 404 is a memory array device chip, and seconddevice layer 420 is a memory array device layer that includes an arrayof NAND memory strings, such as NAND memory strings 121 in FIG. 1B. Insome embodiments, second semiconductor structure 404 is a peripheraldevice chip, and second device layer 420 is a peripheral device layerthat includes peripheral devices, such as transistors 122 in FIG. 1A.Second interconnect layer 422 between second device layer 420 andbonding layer 424 can include interconnect lines and via contacts in oneor more ILD layers. Second interconnect layer 422 does not include abonding alignment mark for aligning first and second bonding contacts414 and 426, according to some embodiments, which is different from theconventional bonded semiconductor devices.

In some embodiments, second bonding layer 424 can include second bondingcontact 426 and second bonding alignment marks 428 both at bondinginterface 418. Second bonding contact 426 and second bonding alignmentmarks 428 can be made of metals, such as Cu, W, Al, Co, etc., andsurrounded by dielectrics, such as silicon oxide or silicon nitride. Inone example, second bonding contact 426 and second bonding alignmentmarks 428 are made of copper, and the dielectrics in second bondinglayer 424 electrically isolating second bonding contact 426 and secondbonding alignment marks 428 are made of silicon oxide. Second bondingcontact 426 can be electrically connected to the interconnects (notshown) in second interconnect layer 422, while second bonding alignmentmarks 428 are electrically separated from the interconnects in secondinterconnect layer 422, for example, by having a thickness smaller thanthe thickness of second bonding layer 424 (and second bonding contact426 therein). It is understood that in some embodiments, the thicknessof second bonding alignment marks 428 is the same as that of secondbonding layer 424 (and second bonding contact 426 therein). In additionto first and second bonding contacts 414 and 426, the dielectrics infirst and second bonding layers 412 and 424 can be in contact with eachother at bonding interface 418 as well. Although not shown in FIG. 4, itis understood that in some embodiments, a semiconductor layer (e.g., athinned substrate) and/or a BEOL interconnect layer are disposed abovesecond device layer 420.

First bonding alignment mark 416 and second bonding alignment mark 428can be used for aligning first bonding contact 414 and second bondingcontact 426 during a bonding process, e.g., hybrid bonding process, forforming bonded semiconductor structure 400. As shown in FIG. 4, in someembodiments, first bonding alignment mark 416 is aligned with secondbonding alignment mark 428 at bonding interface 418, such that firstbonding contact 414 is aligned with second bonding contact 426 atbonding interface 418. Alternatively or additionally, first bondingalignment mark 416 and second bonding alignment mark 428 can be used formeasuring the degree of alignment of first bonding contact 414 andsecond bonding contact 426 after the bonding process, for example, forquality control or tuning the bonding parameters. The degree ofalignment is used for aligning first bonding contact 414 and secondbonding contact 426 during the bonding process, for example, todetermine when the alignment is completed, according to someembodiments. In some embodiments, the degree of alignment is determinedbased on the degree of overlap between two patterns (e.g., first andsecond bonding contacts 414 and 426 or first and second bondingalignment marks 416 and 428) at bonding interface 418. In someembodiments, first and second bonding contacts 414 and 426 areconsidered as aligned when the degree of alignment of first and secondbonding contacts 414 and 426 is within a threshold. In some embodiments,first and second bonding contacts 414 and 426 are considered as alignedwhen the degree of alignment of first and second bonding alignment marksis within a threshold. The threshold can be 100% or less than 100%. Thatis, a certain offset may be acceptable in aligning first and secondbonding contacts 414 and 426.

In order to avoid dishing effect of bonding alignment marks 416 and 428at bonding interface 418, the size of bonding alignment marks 416 and428 is relatively small compared with conventional bonding alignmentmarks in interconnect layers. In some embodiments, a dimension of eachof first and second bonding alignment marks 416 and 428 is not greaterthan about 15 μm, such as not greater than 15 μm. In some embodiments,the dimension of each of first and second bonding alignment marks 416and 428 is between about 1 μm and about 15 μm, such as between 1 μm and15 μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10μm, any range bounded by the lower end by any of these values, or anyrange defined by any two of these values). In some embodiments, thedimension of each of first and second bonding alignment marks 416 and428 is about 10 μm, such as 10 μm. The dimension can be a dimension ofbonding alignment mark 416 or 428 in the plan view (i.e., not includingthe thickness in the vertical direction), such as the length of a side.In some embodiments, the dimension is the smallest length of differentsides.

In some embodiments, at least one of bonding alignment marks 416 and 428is not a single pattern but includes a plurality of repetitive patterns.That is, the same pattern can be repeated to form bonding alignment mark416 and/or 428. For example, FIGS. 5A-5C illustrate plan views ofexemplary bonding alignment marks 416 and 428 in bonding layers 412 and424 at bonding interface 418 of bonded semiconductor device 400,according to some embodiments of the present disclosure. As shown inFIG. 5A, four bonding alignment marks 416 are formed at each side offirst semiconductor structure 402 (e.g., a wafer or each die of a wafer)in the plan view, according to some embodiments. Each bonding alignmentmark 416 can include a plurality of repetitive strips. Each strip can bea metal region (the bright region) separated by adjacent dielectricregions (the dark regions).

As further illustrated in FIG. 6A, each bonding alignment mark 416includes a plurality of repetitive patterns 602, each of which includesa metal region 604 and a dielectric region 606. In some embodiments, adimension of each repetitive pattern 602 is not greater than about 1 μm,such as not greater than 1 μm. In some embodiments, the dimension ofeach repetitive pattern 602 is between about 100 nm and about 1 μm, suchas between 100 nm and 1 μm (e.g., 100 nm, 200 nm, 300 nm, 400 nm, 500nm, 600 nm, 700 nm, 800 nm, 900 nm, 1 μm, any range bounded by the lowerend by any of these values, or any range defined by any two of thesevalues). The dimension can be a dimension of repetitive pattern 602 inthe plan view (i.e., not including the thickness in the verticaldirection), such as the length of a side. In some embodiments, thedimension is the smallest length of different sides. In someembodiments, the size of metal region 604 is not greater than about 25%,such as not greater than 25%, of the size of repetitive pattern 602. Insome embodiments, the size of metal region 604 is between about 1% andabout 25%, such as between 1% and 25%, of the size of repetitive pattern602, (e.g., 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%,15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, any range boundedby the lower end by any of these values, or any range defined by any twoof these values). The dimension, size, and/or layout described abovewith respect to bonding alignment marks 416 can effectively reducedishing effect of bonding alignment mark 416 at bonding interface 418.

As shown in FIG. 5B, four bonding alignment marks 428 are formed at eachside of second semiconductor structure 404 (e.g., another wafer or eachdie of another wafer) in the plan view, according to some embodiments.Each bonding alignment mark 428 can include a plurality of repetitivesquares. Each square can be a metal region (the bright region) separatedby adjacent dielectric regions (the dark regions).

As further illustrated in FIG. 6B, each bonding alignment mark 428includes a plurality of repetitive patterns 608, each of which includesa metal region 610 and a dielectric region 612. In some embodiments, adimension of each repetitive pattern 608 is not greater than about 1 μm,such as not greater than 1 μm. In some embodiments, the dimension ofeach repetitive pattern 608 is between about 100 nm and about 1 μm, suchas between 100 nm and 1 μm (e.g., 100 nm, 200 nm, 300 nm, 400 nm, 500nm, 600 nm, 700 nm, 800 nm, 900 nm, 1 μm, any range bounded by the lowerend by any of these values, or any range defined by any two of thesevalues). The dimension can be a dimension of repetitive pattern 608 inthe plan view (i.e., not including the thickness in the verticaldirection), such as the length of a side. In some embodiments, thedimension is the smallest length of different sides. In someembodiments, the size of metal region 610 is not greater than about 25%,such as not greater than 25%, of the size of repetitive pattern 608. Insome embodiments, the size of metal region 610 is between about 1% andabout 25%, such as between 1% and 25%, of the size of repetitive pattern608, (e.g., 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%,15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, any range boundedby the lower end by any of these values, or any range defined by any twoof these values). The dimension, size, and/or layout described abovewith respect to bonding alignment marks 428 can effectively reducedishing effect of bonding alignment mark 428 at bonding interface 418.

In some embodiments, at least one of first and second bonding alignmentmarks 416 and 428 is a lithography overlay mark. Lithography overlaymark can be used for overlay control, which defines the control ofpattern-to-pattern alignment in multiple lithography processes duringthe fabrication of bonded semiconductor device 400. In some embodiments,the existing lithography overlay marks formed in bonding layers 412 and424 are used as bonding alignment marks 416 and 428. In other words, noadditional dedicated bonding alignment marks may be needed in someembodiments. For example, as shown in FIG. 5C, both bonding alignmentmarks 416 and 428 may be lithography overlay marks at bonding interface418, which can be used for measuring the degree of alignment of bondedsemiconductor device 400. In some embodiments, the degree of alignmentbetween lithography overlay marks is measured using infrared light, forexample, using the same infrared light measurement instrument foroverlay control measurement.

FIG. 7 is a flowchart of an exemplary method 700 for forming asemiconductor device, according to some embodiments of the presentdisclosure. Examples of the semiconductor device depicted in FIG. 7include bonded semiconductor device 400 depicted in FIG. 4. FIGS. 4 and7 will be described together. It is understood that the operations shownin method 700 are not exhaustive and that other operations can beperformed as well before, after, or between any of the illustratedoperations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIG. 7.

Referring to FIG. 7, method 700 starts at operation 702, in which afirst device layer is formed on a first substrate. As illustrated inFIG. 4, first device layer 408 is formed on substrate 406. First devicelayer 408 can be a memory array device layer including a plurality ofNAND memory strings (not shown) or a peripheral device layer including aplurality of peripheral devices (not shown).

Method 700 proceeds to operation 704, in which a first bonding layerincluding a first bonding contact and a first bonding alignment mark isformed above the first device layer. In some embodiments, a firstinterconnect layer is formed between the first bonding layer and thefirst device layer. As illustrated in FIG. 4, first bonding layer 412including first bonding contact 414 and first bonding alignment mark 416is formed above first device layer 408, and first interconnect layer 410is formed between first bonding layer 412 and first device layer 408.

Method 700 proceeds to operation 706, in which a second device layer isformed on a second substrate. As illustrated in FIG. 4, second devicelayer 420 is formed on a substrate (not shown) prior to the bonding.Second device layer 420 can be a memory array device layer including aplurality of NAND memory strings (not shown) or a peripheral devicelayer including a plurality of peripheral devices (not shown).

Method 700 proceeds to operation 708, in which a second bonding layerincluding a second bonding contact and a second bonding alignment markis formed above the second device layer. In some embodiments, a secondinterconnect layer is formed between the second bonding layer and thesecond device layer. As illustrated in FIG. 4, prior to the bonding,second bonding layer 424 including second bonding contact 426 and secondbonding alignment mark 428 is formed above second device layer 420, andsecond interconnect layer 422 is formed between second bonding layer 424and second device layer 420.

In some embodiments, a dimension of each of the first and second bondingalignment marks is not greater than about 15 μm. In one example, thedimension of each of the first and second bonding alignment marks isabout 10 μm. For example, the dimension of each of first and secondbonding alignment marks 416 and 428 is not greater than 15 μm, such as10 μm.

In some embodiments, at least one of the first and second bondingalignment marks includes a plurality of repetitive patterns. In someembodiments, a dimension of each of the repetitive patterns is notgreater than about 1 μm. For example, each of first and second bondingalignment marks 416 and 428 includes a plurality of repetitive patterns602 and 608, and the dimension of each of repetitive patterns 602 and608 is not greater than 1 μm.

In some embodiments, each of the repetitive patterns includes a metalregion and a dielectric region. In some embodiments, a size of the metalregion is not greater than about 25% of a size of the repetitivepattern. For example, each of repetitive patterns 602 and 608 includes ametal region 604 or 610 and a dielectric region 606 or 612, and the sizeof metal region 604 or 610 is not greater than about 25% of the size ofrepetitive pattern 602 or 608.

In some embodiments, at least one of the first and second interconnectlayers does not include a bonding alignment mark for aligning the firstand second bonding contacts. For example, each of first and secondinterconnect layers 410 and 422 does not include a bonding alignmentmark for aligning first and second bonding contacts 414 and 426.

Method 700 proceeds to operation 710, in which the first bondingalignment mark is aligned with the second bonding alignment mark, suchthat the first bonding contact is aligned with the second bondingcontact. In some embodiments, the alignment is made using infrared redto show both first and second bonding alignment marks. As illustrated inFIG. 4, first bonding alignment mark 416 is aligned with second bondingalignment mark 428, such that first bonding contact 414 is aligned withsecond bonding contact 426.

Method 700 proceeds to operation 712, in which the first substrate andthe second substrate are bonded in a face-to-face manner, so that thefirst bonding contact is in contact with the second bonding contact at abonding interface, and the first bonding alignment mark is in contactwith the second bonding alignment mark at the bonding interface. In someembodiments, the bonding includes hybrid bonding. As illustrated in FIG.4, first and second semiconductor structures 402 and 404 are bonded in aface-to-face manner, so that first bonding contact 414 is in contactwith second bonding contact 426 at bonding interface 418, and firstbonding alignment mark 416 is in contact with second bonding alignmentmark 428 at bonding interface 418. The first dielectric in first bondinglayer 412 can be in contact with the second dielectric in second bondinglayer 424 at bonding interface 418 as well after the bonding.

FIG. 8 is a flowchart of an exemplary method 800 for determining adegree of alignment of a bonded structure, according to some embodimentsof the present disclosure. Examples of the bonded structure depicted inFIG. 8 include bonded semiconductor device 400 depicted in FIG. 4. FIGS.4 and 8 will be described together. It is understood that the operationsshown in method 800 are not exhaustive and that other operations can beperformed as well before, after, or between any of the illustratedoperations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIG. 8.

Referring to FIG. 8, method 800 starts at operation 802, in which afirst bonding layer including a first bonding contact and a firstlithography overlay mark is formed. As illustrated in FIG. 4, firstbonding layer 412 including first bonding contact 414 and a firstlithography overlay mark 416 is formed.

Method 800 proceeds to operation 804, in which a second bonding layerincluding a second bonding contact and a second lithography overlay markis formed. As illustrated in FIG. 4, second bonding layer 424 includingsecond bonding contact 426 and a second lithography overlay mark 428 isformed.

Method 800 proceeds to operation 806, in which the first bonding layerand the second bonding layer are bonded in a face-to-face manner at abonding interface. In some embodiments, the bonding includes hybridbonding. As illustrated in FIG. 4, first bonding layer 412 and secondbonding layer 424 are bonded in a face-to-face manner at bondinginterface 418 using hybrid bonding.

Method 800 proceeds to operation 808, in which a degree of alignmentbetween the first lithography overlay mark and the second lithographyoverlay mark is measured. In some embodiments, the degree of alignmentbetween the first and second lithography overlay marks is measured usinginfrared light. For example, the degree of alignment between first andsecond lithography overlay marks 416 and 428 is measured using infraredlight. In some embodiments, an infrared light measurement instrument isused to measure the degree of alignment between first and secondlithography overlay marks 416 and 428 using infrared light having awavelength of about 1,000 nm. First and second lithography overlay marks416 and 428 can be recognized through multiple layers above and/or belowfirst and second bonding layers 412 and 424 because infrared light istransmissive of semiconductor structures, e.g., silicon substrates.

Method 800 proceeds to operation 810, in which a degree of alignmentbetween the first bonding contact and the second bonding contact isdetermined based on the measured degree of alignment between the firstlithography overlay mark and the second lithography overlay mark. Insome embodiments, the two degrees of alignment are correlated. Forexample, the degree of alignment between first and second bondingcontacts 414 and 426 may be determined based on the measured degree ofalignment between first and second lithography overlay marks 416 and428.

According to one aspect of the present disclosure, a semiconductordevice includes a first semiconductor structure, a second semiconductorstructure, and a bonding interface between the first semiconductorstructure and the second semiconductor structure. The firstsemiconductor structure includes a substrate, a first device layerdisposed on the substrate, and a first bonding layer disposed above thefirst device layer and including a first bonding contact and a firstbonding alignment mark. The second semiconductor structure includes asecond device layer, and a second bonding layer disposed below thesecond device layer and including a second bonding contact and a secondbonding alignment mark. The first bonding alignment mark is aligned withthe second bonding alignment mark at the bonding interface, such thatthe first bonding contact is aligned with the second bonding contact atthe bonding interface.

In some embodiments, a dimension of each of the first and second bondingalignment marks is not greater than about 15 μm. The dimension of eachof the first and second bonding alignment marks can be about 10 μm.

In some embodiments, at least one of the first and second bondingalignment marks includes a plurality of repetitive patterns. A dimensionof each of the repetitive patterns is not greater than about 1 μm,according to some embodiments. In some embodiments, each of therepetitive patterns includes a metal region and a dielectric region. Asize of the metal region is not greater than about 25% of a size of therepetitive pattern, according to some embodiments.

In some embodiments, the first semiconductor structure further includesa first interconnect layer between the first device layer and the firstbonding layer, the second semiconductor structure further includes asecond interconnect layer between the second device layer and the secondbonding layer, and at least one of the first and second interconnectlayers does not include a bonding alignment mark for aligning the firstand second bonding contacts.

In some embodiments, the first bonding layer further includes a firstdielectric, and the second bonding layer further includes a seconddielectric in contact with the first dielectric at the bondinginterface.

In some embodiments, at least one of the first and second bondingalignment marks is a lithography overlay mark.

In some embodiments, one of the first and the second device layersincludes a NAND memory string, and another one of the first and thesecond device layers includes a peripheral device.

According to another aspect of the present disclosure, a bondedstructure includes a first bonding layer including a first bondingcontact and a first bonding alignment mark, a second bonding layerincluding a second bonding contact and a second bonding alignment mark,and a bonding interface between the first bonding layer and the secondbonding layer. The first bonding alignment mark is aligned with thesecond bonding alignment mark at the bonding interface, such that thefirst bonding contact is aligned with the second bonding contact at thebonding interface. A dimension of each of the first bonding alignmentmark and the second bonding alignment mark is not greater than about 15μm.

In some embodiments, the dimension of each of the first and secondbonding alignment marks is about 10 μm.

In some embodiments, at least one of the first and second bondingalignment marks includes a plurality of repetitive patterns. A dimensionof each of the repetitive patterns is not greater than about 1 μm,according to some embodiments. In some embodiments, each of therepetitive patterns includes a metal region and a dielectric region. Asize of the metal region is not greater than about 25% of a size of therepetitive pattern, according to some embodiments.

In some embodiments, the first bonding layer further includes a firstdielectric, and the second bonding layer further includes a seconddielectric in contact with the first dielectric at the bondinginterface.

According to still another aspect of the present disclosure, a methodfor forming a semiconductor device is disclosed. A first device layer isformed on a first substrate. A first bonding layer including a firstbonding contact and a first bonding alignment mark is formed above thefirst device layer. A second device layer is formed on a secondsubstrate. A second bonding layer including a second bonding contact anda second bonding alignment mark is formed above the second device layer.The first bonding alignment mark is aligned with the second bondingalignment mark, such that the first bonding contact is aligned with thesecond bonding contact. The first substrate and the second substrate arebonded in a face-to-face manner, so that the first bonding contact is incontact with the second bonding contact at a bonding interface, and thefirst bonding alignment mark is in contact with the second bondingalignment mark at the bonding interface.

In some embodiments, a dimension of each of the first and second bondingalignment marks is not greater than about 15 μm. The dimension of eachof the first and second bonding alignment marks is about 10 μm,according to some embodiments.

In some embodiments, at least one of the first and second bondingalignment marks includes a plurality of repetitive patterns. A dimensionof each of the repetitive patterns is not greater than about 1 μm,according to some embodiments. In some embodiments, each of therepetitive patterns includes a metal region and a dielectric region. Asize of the metal region is not greater than about 25% of a size of therepetitive pattern, according to some embodiments.

In some embodiments, a first interconnect layer is formed between thefirst device layer and the first bonding layer, and a secondinterconnect layer is formed between the second device layer and thesecond bonding layer. At least one of the first and second interconnectlayers does not include a bonding alignment mark for aligning the firstand second bonding contacts.

In some embodiments, the bonding includes hybrid bonding.

According to still another aspect of the present disclosure, a methodfor determining a degree of alignment of a bonded structure isdisclosed. A first bonding layer including a first bonding contact and afirst lithography overlay mark is formed. A second bonding layerincluding a second bonding contact and a second lithography overlay markis formed. The first bonding layer and the second bonding layer arebonded in a face-to-face manner at a bonding interface. A degree ofalignment between the first lithography overlay mark and the secondlithography overlay mark is measured. A degree of alignment between thefirst bonding contact and the second bonding contact is determined basedon the measured degree of alignment between the first lithographyoverlay mark and the second lithography overlay mark.

In some embodiments, the degree of alignment between the first andsecond lithography overlay marks is measured using infrared light.

In some embodiments, a dimension of each of the first and secondlithography overlay marks is not greater than about 15 μm. The dimensionof each of the first and second lithography overlay marks is about 10μm, according to some embodiments.

In some embodiments, at least one of the first and second lithographyoverlay marks includes a plurality of repetitive patterns. A dimensionof each of the repetitive patterns is not greater than about 1 μm,according to some embodiments. In some embodiments, each of therepetitive patterns includes a metal region and a dielectric region. Asize of the metal region is not greater than about 25% of a size of therepetitive pattern, according to some embodiments.

In some embodiments, the bonding includes hybrid bonding.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A semiconductor device, comprising: a first semiconductor structure comprising a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and comprising a first bonding contact and a first bonding alignment mark; a second semiconductor structure comprising a second device layer, and a second bonding layer disposed below the second device layer and comprising a second bonding contact and a second bonding alignment mark; and a bonding interface between the first semiconductor structure and the second semiconductor structure, wherein the first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface; a thickness of the first bonding alignment mark is smaller than a thickness of the first bonding contact, and the first bonding alignment mark and the first bonding contact with different thicknesses are in physical contact with a same material; at least one of the first and second bonding alignment marks comprises a plurality of repetitive patterns, each of the repetitive patterns consisting of a metal region and a dielectric region between two adjacent metal regions; and a size of the metal region is not greater than about 25% of a size of the respective repetitive pattern.
 2. The semiconductor device of claim 1, wherein a dimension of each of the first and second bonding alignment marks is not greater than about 15 μm.
 3. The semiconductor device of claim 2, wherein the dimension of each of the first and second bonding alignment marks is about 10 μm.
 4. The semiconductor device of claim 1, wherein a dimension of each of the repetitive patterns is not greater than about 1 μm.
 5. The semiconductor device of claim 1, wherein the first semiconductor structure further comprises a first interconnect layer between the first device layer and the first bonding layer; the second semiconductor structure further comprises a second interconnect layer between the second device layer and the second bonding layer; and at least one of the first and second interconnect layers does not include a bonding alignment mark for aligning the first and second bonding contacts.
 6. The semiconductor device of claim 1, wherein the first bonding layer further comprises a first dielectric, and the second bonding layer further comprises a second dielectric in contact with the first dielectric at the bonding interface.
 7. The semiconductor device of claim 1, wherein at least one of the first and second bonding alignment marks is a lithography overlay mark.
 8. The semiconductor device of claim 1, wherein one of the first and second device layers comprises a NAND memory string, and another one of the first and second device layers comprises a peripheral device.
 9. A bonded structure, comprising: a first bonding layer comprising a first bonding contact and a first bonding alignment mark; a second bonding layer comprising a second bonding contact and a second bonding alignment mark; and a bonding interface between the first bonding layer and the second bonding layer, wherein the first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface; a thickness of the first bonding alignment mark is smaller than a thickness of the first bonding contact, and the first bonding alignment mark and the first bonding contact with different thicknesses are in physical contact with a same material; a dimension of each of the first bonding alignment mark and the second bonding alignment mark is not greater than about 15 μm; at least one of the first and second bonding alignment marks comprises a plurality of repetitive patterns, each of the repetitive patterns consisting of a metal region and a dielectric region between two adjacent metal regions; and a size of the metal region is not greater than about 25% of a size of the respective repetitive pattern.
 10. The bonded structure of claim 9, wherein the dimension of each of the first and second bonding alignment marks is about 10 μm.
 11. The bonded structure of claim 9, wherein a dimension of each of the repetitive patterns is not greater than about 1 μm.
 12. The bonded structure of claim 9, wherein the first bonding layer further comprises a first dielectric, and the second bonding layer further comprises a second dielectric in contact with the first dielectric at the bonding interface.
 13. A bonded structure, comprising: a first bonding layer comprising a first bonding contact, a first bonding alignment mark, and a first dielectric; a second bonding layer comprising a second bonding contact, a second bonding alignment mark, and a second dielectric; and a bonding interface between the first bonding layer and the second bonding layer, wherein the first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface; a thickness of the first bonding alignment mark is smaller than a thickness of the first bonding contact; the first bonding alignment mark and the first bonding contact with different thicknesses are completely surrounded by the first dielectric; at least one of the first and second bonding alignment marks comprises a plurality of repetitive patterns, each of the repetitive patterns consisting of a metal region and a dielectric region between two adjacent metal regions; and a size of the metal region is not greater than about 25% of a size of the respective repetitive pattern.
 14. The bonded structure of claim 13, wherein a dimension of each of the first bonding alignment mark and the second bonding alignment mark is not greater than about 15 μm. 